基于异质衬底的准垂直GaN二极管器件特性研究
李 想 （ 西安电子科技大学 ）
https://doi.org/10.37155/2717-5170-0405-43Abstract
GaN属于第三代半导体，具有介电常数小、禁带宽度大、高电子饱和速度等特点，有着更好的高频、高 温特性。通常用Johnson品质因数JFM和Baliga品质因数BFOM来表征半导体材料的高频大功率应用潜力。
Keywords
SBD制备工艺及工作原理；基于Silvaco软件的仿真；器件优化Full Text
PDFReferences
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merit for high frequency applications[J]. IEEE lectron Device
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安:西安电子科技大学,2020.
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voltage[J].2019 Appl. Phys. Express 12 084004.
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Termination[J]. IEEE Electron Device Letters, vol. 41, no. 10,
pp,1476-1479,Oct.2020.
Copyright © 2022 李 想
Publishing time:2022-10-18
This work is licensed under a Creative Commons Attribution 4.0 International License
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