Performance Optimization of Crystalline Silicon Solar Cells Based on a Novel Passivated Contact Structure

Rong Su （ Tongwei Solar(Chengdu) Ltd., Chengdu, Sichuan 610200, China ）

Yun-Sha Zhang （ Tongwei Solar(Chengdu) Ltd., Chengdu, Sichuan 610200, China ）

Jin-Feng Deng （ Tongwei Solar(Chengdu) Ltd., Chengdu, Sichuan 610200, China ）

Abstract

With the global energy transition and the advancement of the “dual-carbon” targets, photovoltaic power generation, as one of the major clean and renewable energy sources, has placed increasing emphasis on improving the efficiency and reducing the cost of its core device—the crystalline silicon solar cell. On the basis of the currently mainstream Passivated Emitter and Rear Cell (PERC) technology, further breakthroughs in efficiency are urgently required to overcome existing performance bottlenecks, which calls for innovative optimization of passivated contact structures. This study focuses on a novel passivated contact structure based on a silicon oxynitride (SiOₓNᵧ) composite dielectric passivation layer, and systematically presents its design principles, fabrication processes, performance characterization, and industrial-scale verification. The results demonstrate that by introducing multilayer composite passivation and anti-reflection films on both the front and rear sides of the cell—particularly by exploiting the combined advantages of silicon oxynitride, which integrates the excellent anti-reflection properties of silicon nitride (SiNₓ) with the superior field-effect passivation capability of silicon dioxide (SiO2)—the surface recombination velocity can be effectively reduced, minority carrier lifetime enhanced, short-wavelength spectral response improved, and long-wavelength reflection mitigated. Experimental results indicate that this novel structure can achieve an absolute conversion efficiency gain of more than 0.1% on conventional monocrystalline PERC production lines, while simultaneously improving reliability parameters such as resistance to potential-induced degradation (PID). This work provides a practical and feasible technological pathway for breaking the efficiency limits of crystalline silicon solar cells and achieving cost reduction and performance enhancement in industrial applications.

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